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   <video:description>2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &amp;gt; 106   cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. We offer GaN on SiC wafers for RF and Power applications. 2-inch Free-standing U-GaN/SI-GaN Substrates Excellent level (S) Production level(B) Research</video:description>
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   <image:title>5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity &lt; 0.05   cm Power device/laser</image:title>
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   <image:loc>https://greek.epi-wafers.com/photo/pl108133900-5_10mm2_a_face_un_doped_n_type_free_standing_gan_single_crystal_substrate_resistivity_0_05_cm_power_device_laser.jpg</image:loc>
   <image:title>5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity &lt; 0.05   cm Power device/laser</image:title>
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   <image:title>5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity &lt; 0.05   cm Power device/laser</image:title>
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   <image:title>5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Devices Wafer</image:title>
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   <image:title>5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Devices Wafer</image:title>
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   <image:title>5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Devices Wafer</image:title>
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   <image:title>5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Devices Wafer</image:title>
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   <image:title>5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity &lt; 0.05   cm Power Device/Laser</image:title>
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   <image:title>5*10mm2 SP-Face (10-11)  Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Device</image:title>
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   <image:title>5*10mm2 SP-Face (10-11)  Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Device</image:title>
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   <image:title>5*10mm2 SP-Face (10-11)  Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Device</image:title>
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   <image:title>5*10mm2 SP-Face (10-11)  Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10    Cm RF Device</image:title>
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   <image:title>Power Device 5x10mm2 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with Resistivity 0.1   cm and BOW within 10 m</image:title>
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   <image:title>SP-Face 11-12 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity 0.05   cm Macro Defect Density 0cm  </image:title>
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   <image:title>5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10   Cm RF Device</image:title>
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   <image:loc>https://greek.epi-wafers.com/photo/pl108135798-5_10mm2_sp_face_11_12_un_doped_si_type_free_standing_gan_single_crystal_substrate_resistivity_10_cm_rf_device.jpg</image:loc>
   <image:title>5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10   Cm RF Device</image:title>
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   <image:title>5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10   Cm RF Device</image:title>
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   <image:title>5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity &gt; 10   Cm RF Device</image:title>
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   <image:title>350  25 m Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV   10 m and Resistivity 0.1   cm</image:title>
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   <image:title>350  25 m Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV   10 m and Resistivity 0.1   cm</image:title>
  </image:image>
  <image:image>
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   <image:title>350  25 m Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV   10 m and Resistivity 0.1   cm</image:title>
  </image:image>
  <image:image>
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   <image:title>350  25 m Thickness Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV   10 m and Resistivity 0.1   cm</image:title>
  </image:image>
 </url>
 <url>
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  <lastmod>2025-04-27</lastmod>
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  </image:image>
  <image:image>
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   <image:title>5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05   cm</image:title>
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  </image:image>
  <image:image>
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   <image:title>5*10mm2 SP-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate 20-21 / 20-2-1 10mm2 Resistivity 0.05   cm</image:title>
  </image:image>
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 <url>
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  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate</video:title>
   <video:description>5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity &amp;gt; 106   cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN   It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN)   Conditional GAN is deep learning neural network in which some additional parameters are used. (20-21)/(20-2-1) face Free-standing GaN Substrates Item GaN-FS-SP-U-S GaN-FS-SP-N-S GaN-FS-SP</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.1</video:rating>
   <video:tag>5x10.5mm2 GaN Epitaxial Wafer</video:tag>
   <video:tag>Un Doped Epitaxial Wafer ISO</video:tag>
   <video:tag>SP Face GaN Epitaxial Wafer</video:tag>
  </video:video>
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   <image:title>5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate</image:title>
  </image:image>
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   <image:title>Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um</image:title>
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 <url>
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   <video:title>Gallium Nitride Semiconductor Wafer 325um 375um C Plane</video:title>
   <video:description>2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy</video:description>
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   <video:duration>34</video:duration>
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   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>Gallium Nitride Semiconductor Wafer</video:tag>
   <video:tag>C Plane gan epi wafer</video:tag>
   <video:tag>Semiconductor Wafer 325um</video:tag>
  </video:video>
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   <image:title>Gallium Nitride Semiconductor Wafer 325um 375um C Plane</image:title>
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   <video:description>P-Level 4H-N/SI260um 25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260 m 25 m for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power electronics devices Large diameter wafers for improved economies of scale in semiconductor manufacturing Range of tolerance levels to meet specific device fabrication needs High</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
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   <video:view_count>15</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>P Level SiC Substrate</video:tag>
   <video:tag>Microwave Devices silicon carbide substrate</video:tag>
   <video:tag>2 Inch SiC Substrate</video:tag>
  </video:video>
 </url>
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  <lastmod>2024-10-29</lastmod>
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   <image:title>P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices</image:title>
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   <image:title>P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices</image:title>
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   <image:title>P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices</image:title>
  </image:image>
  <image:image>
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   <image:title>P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices</image:title>
  </image:image>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl108141640-p_level_2_inch_sic_substrate_for_power_devices_and_microwave_devices.jpg</image:loc>
   <image:title>P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices</image:title>
  </image:image>
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 <url>
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   <image:title>4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm   1.5 mm</image:title>
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   <image:title>150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form</image:title>
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   <image:title>JDCD06-001-003 4-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices</image:title>
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   <image:title>JDCD06-001-004 5-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices</image:title>
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   <image:title>JDCD06-001-005 6-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices</image:title>
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   <image:title>JDCD06-001-006 8-Inch Silicon Wafer MEMS Devices Integrated Circuits Dedicated Substrates For Discrete Devices</image:title>
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   <image:title>4 Inch N-Type Si-Doped GaN On Sapphire Wafer SSP Resistivity 0.05   cm LED, Laser, PIN Epitaxial Wafer</image:title>
  </image:image>
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   <video:title>4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10  cm LED Laser PIN Epitaxial Wafer</video:title>
   <video:description>4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10  cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better performance at high temperatures. GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material</video:description>
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   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
   <video:view_count>6</video:view_count>
   <video:rating>4.7</video:rating>
   <video:tag>LED Laser GaN Epitaxial Wafer</video:tag>
  </video:video>
 </url>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10  cm LED Laser PIN Epitaxial Wafer</image:title>
  </image:image>
 </url>
 <url>
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   <video:title>4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity 0.5   cm LED, Laser, PIN Epitaxial Wafer</video:title>
   <video:description>4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity 0.5   cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-11-18T17:26:37+08:00</video:publication_date>
   <video:view_count>5</video:view_count>
   <video:rating>4.8</video:rating>
   <video:tag>PIN GaN On Sapphire Wafer</video:tag>
   <video:tag>4 Inch GaN On Sapphire Wafer</video:tag>
  </video:video>
 </url>
 <url>
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   <image:title>4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity 0.5   cm LED, Laser, PIN Epitaxial Wafer</image:title>
  </image:image>
 </url>
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  </image:image>
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   <image:title>Dimension 520 10nm 2inch Green-LED GaN On Silicon Wafer 20nmContact Layer</image:title>
  </image:image>
 </url>
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  <lastmod>2025-04-27</lastmod>
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   <image:title>JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade  Single Polishing</image:title>
  </image:image>
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   <image:title>JDCD04-001-003 10x10mm2 100(Off 6 ) Fe Doped Free Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing</image:title>
  </image:image>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate</image:title>
  </image:image>
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   <image:title>FWHM&lt;350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm</image:title>
  </image:image>
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   <video:title>JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing</video:title>
   <video:description>10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM 350arcsec,Ra 0.5nm Resistance 1.53E+18 /cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to produce relatively efficient devices, the improved characteristics of gallium nitride give GaN semiconductors the advantage of losing far less energy to heat. The wide bandgap</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>Free-Standing Ga2O3 Single Crystal Substrate</video:tag>
   <video:tag>Product Grade Ga2O3 Single Crystal Substrate</video:tag>
   <video:tag>10x10mm2 Ga2O3 Single Crystal Substrate</video:tag>
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  <lastmod>2025-04-27</lastmod>
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  </image:image>
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  <lastmod>2025-04-27</lastmod>
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   <image:title>JDCD10-001-002 2inch GaAs (100) Si Doped Substrates</image:title>
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  <lastmod>2025-04-27</lastmod>
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   <image:title>JDCD10-001-003 2 inch GaAs(100) Zn Doped Substrates</image:title>
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  <lastmod>2025-04-27</lastmod>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
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  <lastmod>2025-04-27</lastmod>
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   <image:title>JDWY01-001-002 2 Inch Thick Film (1,2)Um AIN On Sapphire Wafer DSP XRD FWHM Of(002) 80arcsec(102)  650arcsec</image:title>
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 </url>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDWY01-001-006 2 Inch Thick Film (3,4)Um AIN On Sapphire Wafer,DSP,XRD FWHM Of(002) 120arcsec(102)  450arcsec</image:title>
  </image:image>
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   <image:loc>https://greek.epi-wafers.com/photo/pl133765822-jdwy01_001_007_2_inch_thick_film_4_5_um_ain_on_sapphire_wafer_ssp_xrd_fwhm_of_002_160arcsec_102_400arcsec.jpg</image:loc>
   <image:title>JDWY01-001-007 2 Inch Thick Film (4,5)Um AIN On Sapphire Wafer,SSP,XRD FWHM Of(002) 160arcsec\(102)  400arcsec</image:title>
  </image:image>
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  <loc>https://greek.epi-wafers.com/sale-30137330-jdzj01-001-002-sic-ingot-crystal-4-d-grade.html</loc>
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  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl133780833-jdzj01_001_002_sic_ingot_crystal_4_d_grade.jpg</image:loc>
   <image:title>JDZJ01-001-002 SiC Ingot Crystal 4&quot; D Grade</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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  </image:image>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDZJ01-001-005 SiC Seed Crystal S Grade 6&quot; S Grade  153 0.5mm</image:title>
  </image:image>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDZJ01-001-007 Silicon Carbide Seed Crystal</image:title>
  </image:image>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl133780816-jdzj01_001_008_4_6inch_sic_seed_crystal.jpg</image:loc>
   <image:title>JDZJ01-001-008 4&amp;6inch SiC Seed Crystal</image:title>
  </image:image>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
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   <image:title>JDZJ01-001-006 SiC Seed Crystal S Grade 6&quot;  153 0.5mm</image:title>
  </image:image>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDCD05-001-003 10*10mm2*0.3mm Electronic Grade Single Crystal Diamond,N Content&lt;100ppb, XRD&lt;0.015  Thermal Conductivity</image:title>
  </image:image>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDCD05-001-004 3*3mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content&lt;100ppb, XRD&lt;0.015  Thermal Conductivity</image:title>
  </image:image>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDCD05-001-005 5*5mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content&lt;100ppb, XRD&lt;0.015  Thermal Conductivity</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDCD05-001-006 10*10mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content&lt;100ppb, XRD&lt;0.015  Thermal Conductivity</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
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   <image:title>JDCD05-001-007 CVD Diamond Substrates</image:title>
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  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing</video:title>
   <video:description>4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the &amp;quot;free electrons&amp;quot; that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure silicon crystal, on the other hand, is nearly an insulator; allowing very little electricity to pass through it. However, this can be changed through a process called doping. Specification SOI</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>MEMS Processing SOI Epitaxial Wafer</video:tag>
   <video:tag>4-Inch SOI Epitaxial Wafer</video:tag>
   <video:tag>SOI Epitaxial Wafer</video:tag>
  </video:video>
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  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
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   <image:title>JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing</image:title>
  </image:image>
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  <loc>https://greek.epi-wafers.com/sale-30139403-jdcd07-001-002-5-inch-soi-epitaxial-wafer-for-mems-processing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <video:video>
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   <video:title>JDCD07-001-002  5 Inch SOI Epitaxial Wafer For MEMS Processing</video:title>
   <video:description>5-inch SOI epitaxial wafer for MEMS processing Overview Silicon Wafers (Si Wafer) are thin slices of highly pure crystallized Silicon. Silicon wafers act as a substrate for microelectronic devices and are especially useful in building electronic circuits because of their conductivity and affordability. Silicon comes seventh as the most common element in the entire universe and the second most common element on earth. Some common materials that contain silicon are beach sand,</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>5-Inch SOI Epitaxial Wafer</video:tag>
   <video:tag>SOI Epitaxial Wafer</video:tag>
   <video:tag>MEMS Processing SOI Epitaxial Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30139403-jdcd07-001-002-5-inch-soi-epitaxial-wafer-for-mems-processing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766541-jdcd07_001_002_5_inch_soi_epitaxial_wafer_for_mems_processing.jpg</image:loc>
   <image:title>JDCD07-001-002  5 Inch SOI Epitaxial Wafer For MEMS Processing</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30139428-jdcd07-001-003-6-inch-soi-epitaxial-wafer-for-mems-processing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766758-jdcd07_001_003_6_inch_soi_epitaxial_wafer_for_mems_processing.jpg</image:loc>
   <image:title>JDCD07-001-003  6-Inch SOI Epitaxial Wafer For MEMS Processing</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30139445-jdcd07-001-004-7-inch-soi-epitaxial-wafer-for-mems-processing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>JDCD07-001-004 7 Inch SOI Epitaxial Wafer For MEMS Processing</video:title>
   <video:description>7-inch SOI epitaxial wafer for MEMS processing Overview A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives. Few of us have a chance to encounter an actual silicon wafer in daily life. A silicon wafer is a thin slice of crystal semiconductor, such as a material made up from silicon crystal, which is circular in shape. Specification SOI Diameter 4   5   6   7   Device Layer Dopant</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.1</video:rating>
   <video:tag>7 Inch SOI Epitaxial Wafer</video:tag>
   <video:tag>MEMS Processing SOI Epitaxial Wafer</video:tag>
   <video:tag>SOI Epitaxial Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30139445-jdcd07-001-004-7-inch-soi-epitaxial-wafer-for-mems-processing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766841-jdcd07_001_004_7_inch_soi_epitaxial_wafer_for_mems_processing.jpg</image:loc>
   <image:title>JDCD07-001-004 7 Inch SOI Epitaxial Wafer For MEMS Processing</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140056-jdcd08-001-002-2-inch-a-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766009-jdcd08_001_002_2_inch_a_plane_sapphire_substrate_wafer.jpg</image:loc>
   <image:title>JDCD08-001-002 2 Inch A-Plane Sapphire Substrate Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140078-jdcd08-001-003-2-inch-m-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766026-jdcd08_001_003_2_inch_m_plane_sapphire_substrate_wafer.jpg</image:loc>
   <image:title>JDCD08-001-003 2 Inch M Plane Sapphire Substrate Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140099-jdcd08-001-004-2inch-r-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766033-jdcd08_001_004_2inch_r_plane_sapphire_substrate_wafer.jpg</image:loc>
   <image:title>JDCD08-001-004 2inch R-Plane Sapphire Substrate Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140125-jdcd08-001-005-4inch-r-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766039-jdcd08_001_005_4inch_r_plane_sapphire_substrate_wafer.jpg</image:loc>
   <image:title>JDCD08-001-005 4inch R-Plane Sapphire Substrate Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140151-jdcd08-001-006-6inch-c-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer</video:title>
   <video:description>JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs Scale. Nearly all sapphires and sapphire jewelry from online sources and in traditional retail stores are described as  natural . 6inch C-plane High Purity Al2O3 substrates</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>6inch Sapphire Substrate Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140151-jdcd08-001-006-6inch-c-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766065-jdcd08_001_006_6inch_c_plane_sapphire_substrate_wafer.jpg</image:loc>
   <image:title>JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140179-jdcd08-001-007-8inch-c-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>JDCD08-001-007 8inch C-Plane Sapphire Substrate Wafer</video:title>
   <video:description>JDCD08-001-007 6inch C-Plane Sapphire Substrate Wafer Ruby and sapphires are both made of corundum (aluminium oxide - Al2O3). Corundum is one of the hardest known natural substance after diamond. In addition, because corundum is so hard and resistant to weathering, it can also be found in sedimentary deposits and sedimentary rocks. Sapphire ranks 9 on the Mohs hardness scale. Corundum is stable under normal wearing conditions, which means it's resistant to the effects of heat</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.1</video:rating>
   <video:tag>8inch Sapphire Substrate Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30140179-jdcd08-001-007-8inch-c-plane-sapphire-substrate-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133765980-jdcd08_001_007_8inch_c_plane_sapphire_substrate_wafer.jpg</image:loc>
   <image:title>JDCD08-001-007 8inch C-Plane Sapphire Substrate Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30141432-1inch-aln-single-crystal-aluminum-nitride-wafer-450um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117859051-1inch_aln_single_crystal_aluminum_nitride_wafer_450um.jpg</image:loc>
   <image:title>1inch AlN Single Crystal Aluminum Nitride Wafer 450um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30141449-25-4mm-1inch-aln-single-crystal-400um-2h-crystal-form.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117859023-25_4mm_1inch_aln_single_crystal_400um_2h_crystal_form.jpg</image:loc>
   <image:title>25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30141461-1inch-aluminum-nitride-aln-single-crystal-sapphire-wafer-400um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117858925-1inch_aluminum_nitride_aln_single_crystal_sapphire_wafer_400um.jpg</image:loc>
   <image:title>1inch Aluminum Nitride AlN Single Crystal Sapphire Wafer 400um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30141488-jdcd02-001-004-10-10mm2-aln-single-crystal-400-50-m-s-p-r-grade.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133765747-jdcd02_001_004_10_10mm2_aln_single_crystal_400_50_m_s_p_r_grade.jpg</image:loc>
   <image:title>JDCD02-001-004 10*10mm2 AlN Single Crystal 400 50 M S/P/R Grade</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30142545-4-inch-4h-sic-substrate-p-level-si-500-0-25-0-m-mpd-5-cm2-resistivity-1e5-cm-for-power-microwave.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766410-4_inch_4h_sic_substrate_p_level_si_500_0_25_0_m_mpd_5_cm2_resistivity_1e5_cm_for_power_microwave.jpg</image:loc>
   <image:title>4 Inch 4H-SiC Substrate P-level SI 500.0 25.0 m MPD 5/cm2  Resistivity 1E5  cm For Power Microwave</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30142778-4-inch-4h-sic-substrate-p-level-si-500-0-25-0-m-mpd-0-3-cm2-resistivity-1e9-cm-for-power-microwave.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766367-4_inch_4h_sic_substrate_p_level_si_500_0_25_0_m_mpd_0_3_cm2_resistivity_1e9_cm_for_power_microwave.jpg</image:loc>
   <image:title>4 Inch 4H-SiC Substrate P-Level SI 500.0 25.0 M MPD 0.3/Cm2  Resistivity 1E9  Cm For Power Microwave</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30142930-4inch-4h-sic-substrate-p-level-n-type-350-0-25-0-m-mpd-0-5-cm2-resistivity-0-015-cm-0-025-cm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl133766416-4inch_4h_sic_substrate_p_level_n_type_350_0_25_0_m_mpd_0_5_cm2_resistivity_0_015_cm_0_025_cm.jpg</image:loc>
   <image:title>4inch 4H-SiC Substrate P-Level N-Type 350.0 25.0 M MPD 0.5/Cm2  Resistivity 0.015  Cm 0.025  Cm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30143003-p-level-si-type-6inch-4h-sic-semi-insulating-substrate-150mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147860-p_level_si_type_6inch_4h_sic_semi_insulating_substrate_150mm.jpg</image:loc>
   <image:title>P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30143021-150mm-4h-sic-wafer-semi-insulating-substrate-6inch-350-m.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147885-150mm_4h_sic_wafer_semi_insulating_substrate_6inch_350_m.jpg</image:loc>
   <image:title>150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350 m</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30143078-6inch-n-type-wafer-p-mos-grade-4h-sic-substrate-350-0-25-0um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147826-6inch_n_type_wafer_p_mos_grade_4h_sic_substrate_350_0_25_0um.jpg</image:loc>
   <image:title>6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0   25.0um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30143103-6inch-4h-sic-substrate-n-type-p-sbd-grade-350-m.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147904-6inch_4h_sic_substrate_n_type_p_sbd_grade_350_m.jpg</image:loc>
   <image:title>6inch 4H SiC Substrate N Type P SBD Grade 350 m</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-30143219-n-type-6inch-4h-silicon-carbide-substrate-primary-flat-length-47-5mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147889-n_type_6inch_4h_silicon_carbide_substrate_primary_flat_length_47_5mm.jpg</image:loc>
   <image:title>N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31099302-patterned-sapphire-crystal-wafer-2inch-sapphire-substrate.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117252328-patterned_sapphire_crystal_wafer_2inch_sapphire_substrate.jpg</image:loc>
   <image:title>Patterned Sapphire Crystal Wafer 2inch Sapphire Substrate</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31099309-50-80mm-patterned-sapphire-substrates-430um-a-plane.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117252369-50_80mm_patterned_sapphire_substrates_430um_a_plane.jpg</image:loc>
   <image:title>50.80mm Patterned Sapphire Substrates 430um A Plane</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31099317-back-laser-making-patterned-pss-sapphire-substrate-ttv-5um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117252404-back_laser_making_patterned_pss_sapphire_substrate_ttv_5um.jpg</image:loc>
   <image:title>Back Laser Making Patterned PSS Sapphire Substrate TTV 5um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31099322-ukas-patterned-sapphire-substrates-flat-edge-angle.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117252436-ukas_patterned_sapphire_substrates_flat_edge_angle.jpg</image:loc>
   <image:title>UKAS Patterned Sapphire Substrates Flat Edge Angle</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31223635-beveling-sic-epitaxial-wafer-150-0-mm-0mm-0-2mm-350-0um-25-0-um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117854257-beveling_sic_epitaxial_wafer_150_0_mm_0mm_0_2mm_350_0um_25_0_um.jpg</image:loc>
   <image:title>Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um  25.0 um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31223643-4h-crystal-form-sic-epitaxial-wafer-wafer-edge-beveling-350-0um-25-0um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117854297-4h_crystal_form_sic_epitaxial_wafer_wafer_edge_beveling_350_0um_25_0um.jpg</image:loc>
   <image:title>4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um   25.0um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31223651-single-crystal-sic-epitaxial-wafer-c-face-optical-polish-si-face-cmp.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117854323-single_crystal_sic_epitaxial_wafer_c_face_optical_polish_si_face_cmp.jpg</image:loc>
   <image:title>Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31223658-4h-sic-epitaxial-wafer-sic-wafer-substrate-for-photonic-devices-iso9001.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-25</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117854349-4h_sic_epitaxial_wafer_sic_wafer_substrate_for_photonic_devices_iso9001.jpg</image:loc>
   <image:title>4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31223665-4h-sic-epitaxial-wafer-0-2-cm2-0-015-cm-0-025-cm-150-0-mm-0mm-0-2mm.html</loc>
  <priority>1.0</priority>
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  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>4H SiC Epitaxial Wafer  0.2 /cm2 0.015  cm 0.025  cm 150.0 mm +0mm/-0.2mm</video:title>
   <video:description>4H SiC Epitaxial Wafer  0.2 /Cm2 0.015  Cm 0.025  Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is much more efficient and will allow more devices to be built on the same size. A 200-mm-diameter SiC is a very expensive semiconductor, but its high yield makes up for this disadvantag</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.6</video:rating>
   <video:tag>4H SiC Epitaxial Wafer</video:tag>
   <video:tag>silicon carbide wafer ISO9001</video:tag>
   <video:tag>SiC Epitaxial Wafer 0.2 /Cm2</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31223665-4h-sic-epitaxial-wafer-0-2-cm2-0-015-cm-0-025-cm-150-0-mm-0mm-0-2mm.html</loc>
  <priority>1.0</priority>
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  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117854375-4h_sic_epitaxial_wafer_0_2_cm2_0_015_cm_0_025_cm_150_0_mm_0mm_0_2mm.jpg</image:loc>
   <image:title>4H SiC Epitaxial Wafer  0.2 /cm2 0.015  cm 0.025  cm 150.0 mm +0mm/-0.2mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224009-10-x-10-5-mm2-free-standing-gan-substrates-10-m-bow-10-m.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117855844-10_x_10_5_mm2_free_standing_gan_substrates_10_m_bow_10_m.jpg</image:loc>
   <image:title>10 X 10.5 Mm2 Free Standing GaN Substrates - 10  m   BOW   10  m</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224016-gan-substrates-ga-face-surface-roughness-0-2-nm-polished-or-0-3-nm-polished-and-surface-treatment-fo.html</loc>
  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117855877-gan_substrates_ga_face_surface_roughness_0_2_nm_polished_or_0_3_nm_polished_and_surface_treatment_for_epitaxy.jpg</image:loc>
   <image:title>GaN Substrates Ga Face Surface Roughness &lt; 0.2 nm (Polished) Or &lt; 0.3 nm (Polished And Surface Treatment For Epitaxy)</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224027-thickness-350-25-m-10-x-10-5-mm2-free-standing-gan-substrates.html</loc>
  <priority>1.0</priority>
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  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117855933-thickness_350_25_m_10_x_10_5_mm2_free_standing_gan_substrates.jpg</image:loc>
   <image:title>Thickness 350  25  m 10 X 10.5 mm2 Free-Standing GaN Substrates</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224034-10-x-10-5-mm2-c-face-un-doped-n-type-free-standing-gan-single-crystal-substrate.html</loc>
  <priority>1.0</priority>
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  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117855972-10_x_10_5_mm2_c_face_un_doped_n_type_free_standing_gan_single_crystal_substrate.jpg</image:loc>
   <image:title>10 X 10.5 Mm2 C Face Un Doped N Type Free Standing GaN Single Crystal Substrate</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224666-1-aln-aluminum-nitride-wafer-400um-s-p-r-grade-chemical-polishing.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
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   <image:title>1'' AlN Aluminum Nitride Wafer 400um S / P / R Grade Chemical Polishing</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224687-1inch-aln-single-crystal-aluminum-nitride-wafer-400-m-s-p-r-grade.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
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   <image:title>1inch AlN Single Crystal Aluminum Nitride Wafer 400 m S / P / R Grade</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224873-0-8um-to-1-2um-patterned-led-sapphire-substrate-round-edge.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117860149-0_8um_to_1_2um_patterned_led_sapphire_substrate_round_edge.jpg</image:loc>
   <image:title>0.8um To 1.2um Patterned Led Sapphire Substrate Round Edge</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224878-a-plane-patterned-sapphire-substrates-bow-8-0-m-edge-round.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117860188-a_plane_patterned_sapphire_substrates_bow_8_0_m_edge_round.jpg</image:loc>
   <image:title>A Plane Patterned Sapphire Substrates BOW -8 - 0 m Edge Round</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224888-back-surface-roughness-0-8um-to-1-2um-patterned-sapphire-substrates-width-16mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117860236-back_surface_roughness_0_8um_to_1_2um_patterned_sapphire_substrates_width_16mm.jpg</image:loc>
   <image:title>Back Surface Roughness 0.8um to 1.2um Patterned Sapphire Substrates Width 16mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224896-50-80mm-patterned-polished-sapphire-substrates-thickness-440um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117860275-50_80mm_patterned_polished_sapphire_substrates_thickness_440um.jpg</image:loc>
   <image:title>50.80mm Patterned Polished Sapphire Substrates Thickness 440um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31224903-patterned-2inch-sapphire-substrates-led-chip-substrate-50-80mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl117860307-patterned_2inch_sapphire_substrates_led_chip_substrate_50_80mm.jpg</image:loc>
   <image:title>Patterned 2inch Sapphire Substrates LED Chip Substrate 50.80mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296573-single-side-polished-ga2o3-substrate-single-crystal-thickness-0-6mm-0-8mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2023-02-17</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147214-single_side_polished_ga2o3_substrate_single_crystal_thickness_0_6mm_0_8mm.jpg</image:loc>
   <image:title>Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296584-semiconductor-single-crystal-gallium-oxide-substrate-uid-doping.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147268-semiconductor_single_crystal_gallium_oxide_substrate_uid_doping.jpg</image:loc>
   <image:title>Semiconductor Single Crystal Gallium Oxide Substrate UID Doping</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296588-10x15mm2-uid-doped-free-standing-ga2o3-wafer-single-polishing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118147292-10x15mm2_uid_doped_free_standing_ga2o3_wafer_single_polishing.jpg</image:loc>
   <image:title>10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296738-2-inch-sic-substrate-350-m-for-demanding-power-electronics.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>2 Inch SiC Substrate 350 m For Demanding Power Electronics</video:title>
   <video:description>P-Level 2-Inch SiC Substrate 4H-N/SI260 m 25 m For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260 m 25 m for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.2</video:rating>
   <video:tag>2 Inch SiC Substrate</video:tag>
   <video:tag>Demanding Power Electronics 2 inch wafer</video:tag>
   <video:tag>SiC Substrate 350um</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296738-2-inch-sic-substrate-350-m-for-demanding-power-electronics.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118148119-2_inch_sic_substrate_350_m_for_demanding_power_electronics.jpg</image:loc>
   <image:title>2 Inch SiC Substrate 350 m For Demanding Power Electronics</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296742-no-secondary-flat-sic-substrate-150-0mm-47-5mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118148155-no_secondary_flat_sic_substrate_150_0mm_47_5mm.jpg</image:loc>
   <image:title>No Secondary Flat SiC Substrate 150.0mm 47.5mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296747-260-m-silicon-carbide-substrate-p-level-for-power-devices-and-microwave-devices.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>260 m Silicon Carbide Substrate P Level For Power Devices And Microwave Devices</video:title>
   <video:description>4H-N/SI260 m 25 m 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260 m 25 m for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC substrates. We have years of SiC production experience and a corporate background in high-volume manufacturing excellence. Our large and continuously expanding IP portfolio ensures</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.3</video:rating>
   <video:tag>260um silicon carbide substrate</video:tag>
   <video:tag>Power Devices Epitaxial Wafer</video:tag>
   <video:tag>silicon carbide substrate P Level</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296747-260-m-silicon-carbide-substrate-p-level-for-power-devices-and-microwave-devices.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118148167-260_m_silicon_carbide_substrate_p_level_for_power_devices_and_microwave_devices.jpg</image:loc>
   <image:title>260 m Silicon Carbide Substrate P Level For Power Devices And Microwave Devices</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296750-p-mos-grade-2-inch-sic-epi-wafer-p-level-p-sbd-grade-d-grade-150-0mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118148183-p_mos_grade_2_inch_sic_epi_wafer_p_level_p_sbd_grade_d_grade_150_0mm.jpg</image:loc>
   <image:title>P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296756-2-inch-semiconductor-wafer-p-level-260-m-for-power-devices-microwave-devices.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118148285-2_inch_semiconductor_wafer_p_level_260_m_for_power_devices_microwave_devices.jpg</image:loc>
   <image:title>2 Inch Semiconductor Wafer P Level 260 m For Power Devices Microwave Devices</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296980-algan-buffer-thickness-600nm-2inch-blue-led-gan-on-silicon-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118149438-algan_buffer_thickness_600nm_2inch_blue_led_gan_on_silicon_wafer.jpg</image:loc>
   <image:title>AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31296999-2-inch-green-led-gan-on-silicon-wafer-dimension-520-10nm.html</loc>
  <priority>1.0</priority>
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  <lastmod>2025-04-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118149520-2_inch_green_led_gan_on_silicon_wafer_dimension_520_10nm.jpg</image:loc>
   <image:title>2 Inch Green LED GaN On Silicon Wafer Dimension 520 10nm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31297998-4-inch-p-type-mg-doped-gan-on-sapphire-wafer-ssp-resistivity-10-cm-led-laser-pin-epitaxial-wafer.html</loc>
  <priority>1.0</priority>
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  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200</video:thumbnail_loc>
   <video:title>4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10  Cm LED Laser PIN Epitaxial Wafer</video:title>
   <video:description>4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10  cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic chemical vapor phase deposition. A number of phenomena are observed as the dopant density is increased to the high values typically used in device applications: the effective</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
   <video:view_count>6</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>LED Laser PIN Epitaxial Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31297998-4-inch-p-type-mg-doped-gan-on-sapphire-wafer-ssp-resistivity-10-cm-led-laser-pin-epitaxial-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2025-04-04</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118154070-4_inch_p_type_mg_doped_gan_on_sapphire_wafer_ssp_resistivity_10_cm_led_laser_pin_epitaxial_wafer.jpg</image:loc>
   <image:title>4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10  Cm LED Laser PIN Epitaxial Wafer</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31411636-thickness-370um-430um-2-inch-gan-epi-wafer-dimensions-50mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm</video:title>
   <video:description>Thickness 400   30  m 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0  0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity &amp;lt; 0.05   cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently results in GaN that is contaminated by carbon, oxygen, and silicon atoms originating from the metal-organic precursors, susceptors, and reactor walls. The extent of contamination</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.7</video:rating>
   <video:tag>2 Inch GaN Epi Wafer</video:tag>
   <video:tag>370um single crystal wafer</video:tag>
   <video:tag>430um GaN Epi Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31411636-thickness-370um-430um-2-inch-gan-epi-wafer-dimensions-50mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118680099-thickness_370um_430um_2_inch_gan_epi_wafer_dimensions_50mm.jpg</image:loc>
   <image:title>Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31411645-12-5mm-2inch-freestanding-n-gan-epi-wafer-si-doped.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped</video:title>
   <video:description>(1- 100)  0.1o, 12.5   1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity &amp;lt; 0.05   cm Power device/laser wafer Growth of 1- m-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputtering sources in an N2/Ar atmosphere. The Si doping concentration in GaN was controlled from 2   1016 to 2   1020 cm 3 by varying Si vapor flux from a solid state single crystalline Si</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>12.5mm gan epi wafer</video:tag>
   <video:tag>2inch gallium nitride wafer</video:tag>
   <video:tag>2Inch gan epi wafer</video:tag>
  </video:video>
 </url>
 <url>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118680154-12_5mm_2inch_freestanding_n_gan_epi_wafer_si_doped.jpg</image:loc>
   <image:title>12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31411651-freestanding-n-gan-substrates-n-face-surface-roughness-0-5um-to1-5um.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118680167-freestanding_n_gan_substrates_n_face_surface_roughness_0_5um_to1_5um.jpg</image:loc>
   <image:title>Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412121-4-inch-blue-led-gan-epitaxial-wafer-c-plane-flat-sapphire.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-11-18</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637</video:thumbnail_loc>
   <video:title>4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire</video:title>
   <video:description>4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2   0.1  4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages   one, it consumes lesser power, two, it is more efficient in terms of light output. For instance, from 2014, to 2018, with advancement in phosphor, the efficiency of blue LEDs increased from 130-140 lm/W to 200-210 lm/W. Another major problem in producing</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-11-18T17:26:37+08:00</video:publication_date>
   <video:view_count>5</video:view_count>
   <video:rating>4.3</video:rating>
   <video:tag>Blue LED GaN Epitaxial Wafer</video:tag>
   <video:tag>4 Inch led wafer</video:tag>
   <video:tag>GaN Epitaxial Wafer C Plane</video:tag>
  </video:video>
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 <url>
  <loc>https://greek.epi-wafers.com/sale-31412121-4-inch-blue-led-gan-epitaxial-wafer-c-plane-flat-sapphire.html</loc>
  <priority>1.0</priority>
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  <lastmod>2024-11-18</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118682417-4_inch_blue_led_gan_epitaxial_wafer_c_plane_flat_sapphire.jpg</image:loc>
   <image:title>4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412129-100mm-4-inch-blue-led-gan-epitaxial-wafer-on-sapphire-ssp-thickness-5um-6um.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-10-08</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118682443-100mm_4_inch_blue_led_gan_epitaxial_wafer_on_sapphire_ssp_thickness_5um_6um.jpg</image:loc>
   <image:title>100mm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Thickness 5um - 6um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412135-flat-sapphire-4-inch-blue-led-gan-epitaxial-wafer-on-sapphire-ssp.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118682474-flat_sapphire_4_inch_blue_led_gan_epitaxial_wafer_on_sapphire_ssp.jpg</image:loc>
   <image:title>Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412140-625um-to-675um-4-inch-blue-led-gan-epitaxial-wafer-on-sapphire-ssp-flat-sapphire.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire</video:title>
   <video:description>Substrate Thickness 650   25  m 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.6</video:rating>
   <video:tag>625um GaN Epitaxial Wafer</video:tag>
   <video:tag>SSP gan on sapphire wafers</video:tag>
   <video:tag>675um GaN Epitaxial Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412140-625um-to-675um-4-inch-blue-led-gan-epitaxial-wafer-on-sapphire-ssp-flat-sapphire.html</loc>
  <priority>1.0</priority>
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  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118682489-625um_to_675um_4_inch_blue_led_gan_epitaxial_wafer_on_sapphire_ssp_flat_sapphire.jpg</image:loc>
   <image:title>625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412239-a-face-n-type-free-standing-gan-gallium-single-crystal-substrate-un-doped.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2023-02-17</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118682974-a_face_n_type_free_standing_gan_gallium_single_crystal_substrate_un_doped.jpg</image:loc>
   <image:title>A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412245-a-face-gan-epitaxial-wafer-free-standing-gan-substrates.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2023-02-17</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118683001-a_face_gan_epitaxial_wafer_free_standing_gan_substrates.jpg</image:loc>
   <image:title>A Face GaN Epitaxial Wafer Free Standing GaN Substrates</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412246-single-crystal-gallium-nitride-semiconductor-wafer-ttv-10um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um</video:title>
   <video:description>5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &amp;lt; 0.1   cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms &amp;lt; 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epitaxial growth has been achieved. Laser diodes: violet LD, blue LD, and green LD Power electronic devices, High frequency electronic devices M face Free-standing GaN Substrates Item GaN</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.1</video:rating>
   <video:tag>Single Crystal Semiconductor Wafer</video:tag>
   <video:tag>TTV 10um epi wafer</video:tag>
   <video:tag>Gallium Nitride Semiconductor Wafer</video:tag>
  </video:video>
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 <url>
  <loc>https://greek.epi-wafers.com/sale-31412246-single-crystal-gallium-nitride-semiconductor-wafer-ttv-10um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118683012-single_crystal_gallium_nitride_semiconductor_wafer_ttv_10um.jpg</image:loc>
   <image:title>Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412254-5-x-10-mm2-m-face-gan-epitaxial-wafer-thickness-325um-375um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-11-18</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637</video:thumbnail_loc>
   <video:title>5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um</video:title>
   <video:description>5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350  25  m 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &amp;lt; 0.05   cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications. The features are high crystalline, good uniformity, and superior surface quality. GaN</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-11-18T17:26:37+08:00</video:publication_date>
   <video:view_count>5</video:view_count>
   <video:rating>4.3</video:rating>
   <video:tag>5 X 10.5 mm2  GaN Epitaxial Wafer</video:tag>
   <video:tag>325um gan gallium nitride wafer</video:tag>
   <video:tag>GaN Epitaxial Wafer 375um</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412254-5-x-10-mm2-m-face-gan-epitaxial-wafer-thickness-325um-375um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-11-18</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118683031-5_x_10_mm2_m_face_gan_epitaxial_wafer_thickness_325um_375um.jpg</image:loc>
   <image:title>5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412259-gan-gallium-nitride-wafer-thickness-325um-375um-freestanding.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118683061-gan_gallium_nitride_wafer_thickness_325um_375um_freestanding.jpg</image:loc>
   <image:title>GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding</image:title>
  </image:image>
 </url>
 <url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade</video:title>
   <video:description>JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. Compared to other semiconductors, a silicon carbide wafer is ideal for a wide range of power and</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>SiC Epitaxial Wafer P-MOS</video:tag>
   <video:tag>D Grade silicon epi wafer</video:tag>
   <video:tag>SiC Epitaxial Wafer P-SBD</video:tag>
  </video:video>
 </url>
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  <loc>https://greek.epi-wafers.com/sale-31412721-polytype-none-permitted-sic-epitaxial-wafer-p-mos-p-sbd-d-grade.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118685135-polytype_none_permitted_sic_epitaxial_wafer_p_mos_p_sbd_d_grade.jpg</image:loc>
   <image:title>Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade</image:title>
  </image:image>
 </url>
 <url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>0.015  cm 0.025  cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP</video:title>
   <video:description>0.015  cm 0.025  cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. The other type is a type of insulator. The temperature range is extremely important for electrical and magnetic fields in power semiconductors. A silicon carbide wafer is conductive</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>SiC Epitaxial Wafer C-Face</video:tag>
   <video:tag>Optical Polish sic wafer</video:tag>
   <video:tag>Si-Face CMP Sic Epitaxial Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412723-0-015-cm-0-025-cm-sic-epitaxial-wafer-c-face-optical-polish-si-face-cmp.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118685151-0_015_cm_0_025_cm_sic_epitaxial_wafer_c_face_optical_polish_si_face_cmp.jpg</image:loc>
   <image:title>0.015  cm 0.025  cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412731-150-0mm-0mm-0-2mm-sic-epitaxial-wafer-47-5mm-1-5mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118685188-150_0mm_0mm_0_2mm_sic_epitaxial_wafer_47_5mm_1_5mm.jpg</image:loc>
   <image:title>150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm   1.5mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412798-4h-sic-epitaxial-wafer-0-015-cm-0-025-cm-4000-cm-150-0-mm-0mm-0-2mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>4H SiC Epitaxial Wafer 0.015  cm 0.025  Cm  4000/cm 150.0 mm +0mm/-0.2mm</video:title>
   <video:description>4H SiC Epitaxial Wafer 0.015  cm 0.025  cm  4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite. The beta form is similar to diamond, and is used in a few applications. It has been the preferred choice in power semis for electric vehicles. Several third-party SiC wafer</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>4H SiC Epitaxial Wafer</video:tag>
   <video:tag>silicon epi wafer 0.025Ω•Cm</video:tag>
   <video:tag>SiC Epitaxial Wafer 0.015Ω•Cm</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31412798-4h-sic-epitaxial-wafer-0-015-cm-0-025-cm-4000-cm-150-0-mm-0mm-0-2mm.html</loc>
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   <image:title>4H SiC Epitaxial Wafer 0.015  cm 0.025  Cm  4000/cm 150.0 mm +0mm/-0.2mm</image:title>
  </image:image>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
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  <video:video>
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   <video:title>47.5 mm   1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to&lt;11-20&gt; 1 </video:title>
   <video:description>47.5 mm   1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to 1  JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diameter. It is used in high-power electronics. The second type is the epitaxial crystalline silicon carbide wafer. This type of wafer is created by adding layers of single silicon</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.6</video:rating>
   <video:tag>446mm SiC Epitaxial Wafer</video:tag>
   <video:tag>4 H epitaxial silicon wafer</video:tag>
   <video:tag>UKAS SiC Epitaxial Wafer</video:tag>
  </video:video>
 </url>
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  <lastmod>2024-10-29</lastmod>
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   <image:title>47.5 mm   1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to&lt;11-20&gt; 1 </image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm</video:title>
   <video:description>JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, which means that wafer supply is crucial to success. To accommodate the increased demand for SiC semiconductors, chipmakers are increasingly turning to both in-house and external</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.3</video:rating>
   <video:tag>150.0 mm SiC Epitaxial Wafer</video:tag>
   <video:tag>silicon carbide wafer 3mm</video:tag>
   <video:tag>SiC Epitaxial Wafer No Secondary Flat</video:tag>
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  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118685631-150_0mm_0mm_0_2mm_sic_epitaxial_wafer_no_secondary_flat_3mm.jpg</image:loc>
   <image:title>150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-24</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118685966-6inch_4h_sic_n_type_substrate_47_5mm_no_secondary_flat.jpg</image:loc>
   <image:title>6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118686415-17mm_2inch_gaas_epi_wafer_undoped_substrates_50_8mm.jpg</image:loc>
   <image:title>17mm 2inch GaAs Epi Wafer Undoped Substrates 50.8mm</image:title>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118687536-1um_to_5um_aluminum_nitride_substrate_single_or_double_side_polished.jpg</image:loc>
   <image:title>1um To 5um Aluminum Nitride Substrate Single Or Double Side Polished</image:title>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
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   <image:title>2 Inch Thick Film Aluminum Nitride Wafer AIN On Sapphire Wafer Al Face</image:title>
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  <image:image>
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   <image:title>Semi Insulating Aluminum Nitride Wafer AIN On Sapphire Wafer Surface</image:title>
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  <video:video>
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   <video:title>Semi Insulating AIN Sapphire Wafer Sapphire Single or Double Side Polished</video:title>
   <video:description>2 Inch Thick Film (1,2) m AIN On Sapphire Wafer SSP XRD FWHM Of(002) 80arcsec(102)  650arcsec UV Disinfection LED Chip The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide variety of products can be made from aluminum nitride. This is the most common use for aluminum nitride. It is an important material in the aerospace industry. However, there are some</video:description>
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   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.5</video:rating>
   <video:tag>AIN Sapphire Wafer</video:tag>
   <video:tag>Semi Insulating AIN Wafer</video:tag>
   <video:tag>Sapphire Wafer Single Side Polished</video:tag>
  </video:video>
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  <priority>1.0</priority>
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  <lastmod>2024-10-29</lastmod>
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   <image:title>Semi Insulating AIN Sapphire Wafer Sapphire Single or Double Side Polished</image:title>
  </image:image>
 </url>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>AIN On Aluminum Nitride Wafer Roughness Ra&lt;1.5nm</image:title>
  </image:image>
 </url>
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  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118687800-thick_film_2um_3um_ain_on_sapphire_wafer_2_inch_semi_insulating.jpg</image:loc>
   <image:title>Thick Film 2um 3um AIN On Sapphire Wafer 2 Inch Semi Insulating</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118687823-2inch_aluminum_nitride_wafer_single_or_double_side_polished.jpg</image:loc>
   <image:title>2inch Aluminum Nitride Wafer Single Or Double Side Polished</image:title>
  </image:image>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2023-02-17</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118702261-ra_0_3nm_ga2o3_single_crystal_epitaxial_wafer_2_inch_4_inch.jpg</image:loc>
   <image:title>Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch</image:title>
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 </url>
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   <video:title>Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2</video:title>
   <video:description>10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM 350arcsec,Ra 0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic  -gallia structure ( -phase or  -Ga2O3) is the most stable crystal structure and has attracted most of the recent attention. The different polymorphs can be either insulators or conductors,</video:description>
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   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>Sn Doping Ga2O3 Wafer</video:tag>
   <video:tag>0.8mm Gallium Oxide wafer</video:tag>
   <video:tag>Ga2O3 Wafer 10x10mm2</video:tag>
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  <changefreq>monthly</changefreq>
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  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118702297-sn_doping_ga2o3_wafer_single_crystal_substrate_10x10mm2.jpg</image:loc>
   <image:title>Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2</image:title>
  </image:image>
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  <lastmod>2023-02-17</lastmod>
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   <image:title>High Purity Al2O3 50mm Sapphire Substrate Wafer Thk 430 m</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2023-02-17</lastmod>
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   <image:title>Crystal Orientation C/M0.2 50mm Sapphire Substrate Wafer Thk 420um</image:title>
  </image:image>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
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  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
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   <video:description>High purity Al2O3 99.995% Sapphire Substrate Wafer Mirror Polished EPI-Ready JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430 m, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material Sapphire Substrate Sapphire Substrate makes for superior window material for many IR applications from 3 m to 5 m, for they offer resistant to high temperature, thermal shock, water and sand erosion, small dielectric loss, excellent electrical insulation, with</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.8</video:rating>
   <video:tag>Sapphire Wafer EPI Ready</video:tag>
   <video:tag>led sapphire substrate R9</video:tag>
   <video:tag>sapphire wafer A Plane</video:tag>
  </video:video>
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  <lastmod>2024-10-29</lastmod>
  <image:image>
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   <image:title>High Purity Al2O3 99.995% Sapphire Wafer Mirror Polished EPI Ready</image:title>
  </image:image>
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  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118707682-discrete_devices_si_substrates_p_e_p_p_e_e_g_g_surface_finished.jpg</image:loc>
   <image:title>Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished</image:title>
  </image:image>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118707759-prime_2_silicon_wafer_standard_10_m_maximum_capabilities_5um.jpg</image:loc>
   <image:title>Prime 2'' Silicon Wafer Standard &lt;10  m Maximum Capabilities&lt;5um</image:title>
  </image:image>
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  <lastmod>2022-09-27</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118707801-microelectronic_279um_silicon_epitaxial_wafer_primary_substrate.jpg</image:loc>
   <image:title>Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate</image:title>
  </image:image>
 </url>
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   <image:title>N Type Phos Silicon Wafer 3&quot; Thickness 279um 380um 525um 625um</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118707894-4_5_6_si_wafer_p_type_boron_n_type_as_n_type_sb.jpg</image:loc>
   <image:title>4&quot; 5&quot; 6&quot; Si Wafer P Type / Boron  N Type / As  N Type / Sb</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
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   <image:title>Growth Method CZ Silicon Wafer 5&quot; Orientation &lt;1-0-0&gt;, &lt;1-1-1&gt;, &lt;1-1-0&gt;</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31417494-semiconductor-devices-2-inch-silicon-substrate-wafer-8-12.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118707980-semiconductor_devices_2_inch_silicon_substrate_wafer_8_12.jpg</image:loc>
   <image:title>Semiconductor Devices 2 Inch Silicon Substrate Wafer 8'' 12''</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31417503-n-type-sb-n-type-as-silicon-wafer-6-inch-8-inch.html</loc>
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   <image:title>VGF 2inch GaAs Epi Wafer Undoped Substrates Side Polished Etched</image:title>
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   <image:title>Optical Communications Gallium Arsenide Substrate LEDs</image:title>
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   <image:title>Semiconductor Compound  2inch GaAs Epi Wafer GaAs Si Wafer UKAS</image:title>
  </image:image>
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   <image:title>JDCD10-001-001 2inch GaAs (100) Undoped Substrates</image:title>
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   <image:title>18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N</image:title>
  </image:image>
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  <lastmod>2023-02-17</lastmod>
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   <image:title>12 Inch Silicon Wafer P Type Boron N Type Phos</image:title>
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   <image:title>Silicon 8 Inch Wafer Surface Finished P/E P/P E/E G/G</image:title>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>MEMS Devices Silicon Substrates Integrated Circuits Dedicated</image:title>
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   <image:title>Electronic Grade CVD Diamond Substrates Dielectric Constant 5.5</image:title>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>70 To 120 PGa CVD Diamond Substrates Single Crystal Electronic Grade</image:title>
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  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
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   <image:title>225nm To Far Infrared Electronic Grade Single Crystal Diamond Wafer N Content</image:title>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>Wm K 1000 ~ 2000 CVD Diamond Substrates Thermal Conductivity 300K</image:title>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>XRD&lt;0.015  Electronic Grade Single Crystal Diamond For Heat Sink</image:title>
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  <lastmod>2022-09-27</lastmod>
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   <image:title>3.515g/cm3 CVD Diamond Substrates Light Transmittance 225nm To Far Infrared</image:title>
  </image:image>
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  <priority>1.0</priority>
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   <image:title>Young's Modulus 1050PGa Single Crystal Substrate Electronic Grade</image:title>
  </image:image>
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  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
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   <image:title>N Content&lt;100ppb Electronic Grade Single Crystal Wafer For Heat Sink</image:title>
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  <lastmod>2022-10-09</lastmod>
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   <image:title>Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing</image:title>
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  <video:video>
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   <video:description>10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM 350arcsec,Ra 0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported</video:description>
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   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
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   <video:tag>Side Polished Ga2O3 Wafer</video:tag>
   <video:tag>0.6mm gallium nitride substrate</video:tag>
   <video:tag>Ga2O3 Wafer UKAS</video:tag>
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   <image:title>Crystal Orientation C/M0.2 Sapphire Wafer Thk 440 m</image:title>
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   <image:title>A Plane Sapphire Wafer Mirror Polished EPI Ready</image:title>
  </image:image>
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   <image:title>A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready</image:title>
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  <lastmod>2023-02-17</lastmod>
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   <image:title>R Type 50mm Sapphire Wafer Thickness 420 m OF length (mm) 16 LED chip</image:title>
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  <lastmod>2023-02-17</lastmod>
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   <image:title>Optoelectronics Polishing Sapphire Crystal Wafer R Type</image:title>
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  <loc>https://greek.epi-wafers.com/sale-31420816-mirror-polished-sapphire-wafer-epi-ready-front-surface.html</loc>
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  <lastmod>2023-02-17</lastmod>
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   <image:title>Mirror Polished Sapphire Wafer EPI Ready Front Surface</image:title>
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  <lastmod>2023-02-17</lastmod>
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   <image:title>50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type</image:title>
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  <loc>https://greek.epi-wafers.com/sale-31420834-thk-430um-sapphire-substrate-crystal-orientation-c-m0-2.html</loc>
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  <lastmod>2023-02-17</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118723959-thk_430um_sapphire_substrate_crystal_orientation_c_m0_2.jpg</image:loc>
   <image:title>Thk 430um Sapphire Substrate Crystal Orientation C/M0.2</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31421619-100-0mm-silicon-carbide-crystal-4-p-grade-politype-4h.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118727798-100_0mm_silicon_carbide_crystal_4_p_grade_politype_4h.jpg</image:loc>
   <image:title>100.0mm Silicon Carbide Crystal 4&quot; P Grade Politype 4H</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31421622-100-0mm-silicon-carbide-crystal-4-p-grade-18-0mm.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118727822-100_0mm_silicon_carbide_crystal_4_p_grade_18_0mm.jpg</image:loc>
   <image:title>100.0mm Silicon Carbide Crystal 4&quot; P Grade 18.0mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31421630-4h-politype-single-crystal-silicon-carbide-4-p-grade-si-face.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-09-27</lastmod>
  <image:image>
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   <image:title>4H Politype Single Crystal Silicon Carbide 4&quot; P Grade Si Face</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31421634-0-015ohm-cm-to-0-028ohm-cm-silicon-carbide-crystal-n-type.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118727879-0_015ohm_cm_to_0_028ohm_cm_silicon_carbide_crystal_n_type.jpg</image:loc>
   <image:title>0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31421641-primary-flat-lengh-32-5mm-silicon-carbide-crystal-4-p-grade-100-0mm.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-27</lastmod>
  <image:image>
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   <image:title>Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4&quot; P Grade 100.0mm</image:title>
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 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422198-threshold-current-0-5a-laser-diode-chip-laser-printing-slope-efficiency-1-0w-a.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
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   <image:title>Threshold Current 0.5A Laser Diode Chip Laser Printing Slope Efficiency 1.0W/A</image:title>
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 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422281-surface-mount-standard-package-laser-diode-chip-1-0w-a.html</loc>
  <priority>1.0</priority>
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  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118731434-surface_mount_standard_package_laser_diode_chip_1_0w_a.jpg</image:loc>
   <image:title>Surface Mount Standard Package Laser Diode Chip 1.0W/A</image:title>
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 </url>
 <url>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
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   <image:title>0.5A Laser Diodes Chip Laser Printing Wavelength 915nm Surface Mount</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422296-94um-laser-diode-chip-slope-efficiency-1-0w-a-wavelength-915nm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-09</lastmod>
  <image:image>
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   <image:title>94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422302-915nm-10w-cos-diode-laser-chip-on-submount-design.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118731244-915nm_10w_cos_diode_laser_chip_on_submount_design.jpg</image:loc>
   <image:title>915nm 10W COS Diode Laser Chip On Submount Design</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422309-laser-printing-diode-chip-operating-temperature-15-to-55-degree-output-power-10w.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
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   <image:title>Laser Printing Diode Chip Operating Temperature 15 To 55 Degree Output Power 10W</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422317-threshold-current-0-5a-laser-diode-chip-power-conversion-efficiency-58.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118731307-threshold_current_0_5a_laser_diode_chip_power_conversion_efficiency_58.jpg</image:loc>
   <image:title>Threshold Current 0.5A Laser Diode Chip Power Conversion Efficiency 58%</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31422325-laser-printing-laser-diode-semiconductor-chip-1-0w-a-emitter-size-94-m-wavelength-915nm.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118731340-laser_printing_laser_diode_semiconductor_chip_1_0w_a_emitter_size_94_m_wavelength_915nm.jpg</image:loc>
   <image:title>Laser Printing Laser Diode Semiconductor Chip 1.0W/A Emitter Size 94 m Wavelength 915nm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31467913-915nm-laser-diode-chip-printing-surface-mount-standard-package.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-22</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118949871-915nm_laser_diode_chip_printing_surface_mount_standard_package.jpg</image:loc>
   <image:title>915nm Laser Diode Chip Printing Surface Mount Standard Package</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468028-emitter-size-94um-diode-laser-chip-on-submount-design-threshold-current-0-5a.html</loc>
  <priority>1.0</priority>
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  <lastmod>2022-09-26</lastmod>
  <image:image>
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   <image:title>Emitter Size 94um Diode Laser Chip On Submount Design Threshold Current 0.5A</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468745-un-doped-n-type-gan-single-crystal-substrate-5x10mm2-m-face.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face</video:title>
   <video:description>5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity &amp;lt; 0.1   cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short laser pulses on the thermal decomposition of GaN and possible applications of the laser-induced dissociation of GaN for fast etching of this material is discussed. Particular emphasis</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.8</video:rating>
   <video:tag>GaN Single Crystal Substrate</video:tag>
   <video:tag>Gallium Nitride N Type Wafer</video:tag>
   <video:tag>Single Crystal Substrate 5x10.5mm2</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468745-un-doped-n-type-gan-single-crystal-substrate-5x10mm2-m-face.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118953431-un_doped_n_type_gan_single_crystal_substrate_5x10mm2_m_face.jpg</image:loc>
   <image:title>Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468756-m-face-gan-epitaxial-wafer-free-standing-gan-substrates-325um-ttv-10um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118953481-m_face_gan_epitaxial_wafer_free_standing_gan_substrates_325um_ttv_10um.jpg</image:loc>
   <image:title>M Face GaN Epitaxial Wafer Free Standing GaN Substrates 325um TTV 10um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468767-front-surface-roughness-gan-on-silicon-wafer-gan-substrate.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118953521-front_surface_roughness_gan_on_silicon_wafer_gan_substrate.jpg</image:loc>
   <image:title>Front Surface Roughness GaN On Silicon Wafer GaN Substrate</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468825-gan-single-crystal-gallium-nitride-wafer-si-type.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118953769-gan_single_crystal_gallium_nitride_wafer_si_type.jpg</image:loc>
   <image:title>GaN Single Crystal Gallium Nitride Wafer SI Type</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468835-5x10mm2-gan-epitaxial-wafer-un-doped-si-type.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241029_67205aa06d552.mp4.jpg?1730173795</video:thumbnail_loc>
   <video:title>5x10mm2 GaN Epitaxial Wafer Un Doped SI Type</video:title>
   <video:description>5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity &amp;gt; 106   cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several characteristics that make it better than GaAs and Silicon for various high power components. These characteris</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/c902d40ce3938dcacb34f084222fcff9/playlist.m3u8</video:content_loc>
   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.4</video:rating>
   <video:tag>GaN Epitaxial Wafer SI Type</video:tag>
   <video:tag>5x10.5mm2 gan epi wafer</video:tag>
   <video:tag>5x10.5mm2 GaN Epitaxial Wafer</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468835-5x10mm2-gan-epitaxial-wafer-un-doped-si-type.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-29</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118953806-5x10mm2_gan_epitaxial_wafer_un_doped_si_type.jpg</image:loc>
   <image:title>5x10mm2 GaN Epitaxial Wafer Un Doped SI Type</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468839-sp-face-5-x-10mm2-gallium-nitride-substrate-350um.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118953839-sp_face_5_x_10mm2_gallium_nitride_substrate_350um.jpg</image:loc>
   <image:title>SP Face 5 X 10mm2 Gallium Nitride Substrate 350um</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468894-50-8mm-gallium-nitride-semiconductor-wafer-2-inch-free-standing.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118954080-50_8mm_gallium_nitride_semiconductor_wafer_2_inch_free_standing.jpg</image:loc>
   <image:title>50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468901-single-crystal-gan-epitaxial-wafer-2inch-c-face-un-doped-n-type.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2022-10-08</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118954111-single_crystal_gan_epitaxial_wafer_2inch_c_face_un_doped_n_type.jpg</image:loc>
   <image:title>Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468906-2-inch-u-gan-substrates-si-gan-substrates-50-8mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-14</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241014_670cc42997821.mp4.jpg?1728896789</video:thumbnail_loc>
   <video:title>2 Inch U GaN Substrates SI GaN Substrates 50.8mm</video:title>
   <video:description>2-inch Free-standing U-GaN/SI-GaN Substrates 350   25  m 50.8   1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &amp;lt; 0.1   cm Power device/laser wafer Overview GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/420742ee781e900aa90f26f12e636cd0/playlist.m3u8</video:content_loc>
   <video:duration>17</video:duration>
   <video:publication_date>2024-10-14T15:11:37+08:00</video:publication_date>
   <video:view_count>5</video:view_count>
   <video:rating>4.8</video:rating>
   <video:tag>U GaN Substrates</video:tag>
   <video:tag>GaN 2 Inch Wafer</video:tag>
   <video:tag>SI GaN Substrates 50.8mm</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468906-2-inch-u-gan-substrates-si-gan-substrates-50-8mm.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-14</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118954138-2_inch_u_gan_substrates_si_gan_substrates_50_8mm.jpg</image:loc>
   <image:title>2 Inch U GaN Substrates SI GaN Substrates 50.8mm</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468913-375-um-gan-epitaxial-wafer-free-standing-u-gan-si-gan-substrates.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-11-18</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241118_673b0851c06f7.mp4.jpg?1731928637</video:thumbnail_loc>
   <video:title>375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates</video:title>
   <video:description>350   25  m (11-20)   3o, 8   1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity &amp;lt; 0.1   cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the surface roughness of GaN Single Crystal Substrate with an atomic force microscope, which applies to GaN single crystal substrates grown by chemical vapor deposition and other methods</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202411/45ee2511ab73b51e99dde76c4479f0d6/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-11-18T17:26:37+08:00</video:publication_date>
   <video:view_count>5</video:view_count>
   <video:rating>4.5</video:rating>
   <video:tag>375um GaN Epitaxial Wafer</video:tag>
   <video:tag>gallium nitride wafer UKAS</video:tag>
   <video:tag>GaN Epitaxial Wafer 50.8mm</video:tag>
  </video:video>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468913-375-um-gan-epitaxial-wafer-free-standing-u-gan-si-gan-substrates.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-11-18</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl118954160-375_um_gan_epitaxial_wafer_free_standing_u_gan_si_gan_substrates.jpg</image:loc>
   <image:title>375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates</image:title>
  </image:image>
 </url>
 <url>
  <loc>https://greek.epi-wafers.com/sale-31468952-2-inch-free-standing-si-gan-substrates.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-10-14</lastmod>
  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20241014_670cc42997821.mp4.jpg?1728896789</video:thumbnail_loc>
   <video:title>2 inch Free-standing SI-GaN Substrates</video:title>
   <video:description>2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &amp;gt; 106   cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated from the interface of AlGaN and GaN, the thickness ratio of Fe-doped and undoped GaN bi-epilayers was also optimized. AlGaN/GaN high electron mobility transistors with the optimum doping concentration of Fe-doped GaN and suitable thickness of undoped GaN have been</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202410/420742ee781e900aa90f26f12e636cd0/playlist.m3u8</video:content_loc>
   <video:duration>17</video:duration>
   <video:publication_date>2024-10-14T15:11:37+08:00</video:publication_date>
   <video:view_count>5</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>350um GaN Epitaxial Wafer</video:tag>
   <video:tag>Free Standing GaN Substrates</video:tag>
   <video:tag>GaN Epitaxial Wafer 10 X 10.5 mm2</video:tag>
  </video:video>
 </url>
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  <priority>1.0</priority>
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   <image:title>2 inch Free-standing SI-GaN Substrates</image:title>
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 <url>
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   <video:title>Fe Doped GaN Substrates Resistivity &gt; 10    Cm RF Devices</video:title>
   <video:description>2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &amp;gt; 106   cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain the high breakdown voltage. The details of the correlation between the surface morphology, Fe concentration, and thickness of Fe-doped GaN epitaxial layers used for high breakdown</video:description>
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   <video:duration>34</video:duration>
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   <video:view_count>15</video:view_count>
   <video:rating>4.8</video:rating>
   <video:tag>ISO GaN Substrates</video:tag>
   <video:tag>gan semiconductor wafer</video:tag>
   <video:tag>Fe Doped GaN Substrates</video:tag>
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   <image:title>Fe Doped GaN Substrates Resistivity &gt; 10    Cm RF Devices</image:title>
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   <video:description>2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity &amp;gt; 106   cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were studied using metalorganic chemical vapor deposition for high breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be realized by changing the ferrocene flow, while higher Fe concentrations in the GaN epilayer affect the surface morphology</video:description>
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   <video:duration>17</video:duration>
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   <video:view_count>5</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>GaN Epitaxial Wafer C Face</video:tag>
   <video:tag>Fe Doped single crystal substrate</video:tag>
   <video:tag>2inch GaN Epitaxial Wafer</video:tag>
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   <image:title>Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration Measurement</image:title>
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   <video:title>2 6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device</video:title>
   <video:description>Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. Epitaxial wafers are then</video:description>
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   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
   <video:view_count>6</video:view_count>
   <video:rating>4.5</video:rating>
   <video:tag>2inch gan epi wafer</video:tag>
   <video:tag>6inch gan epi wafer</video:tag>
   <video:tag>N Type gan epi wafer</video:tag>
  </video:video>
 </url>
 <url>
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  <lastmod>2024-12-06</lastmod>
  <image:image>
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   <image:title>2 6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device</image:title>
  </image:image>
  <image:image>
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   <image:title>2 6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device</image:title>
  </image:image>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl169417970-2_6_inch_n_type_gan_on_sapphire_epitaxial_wafer_for_led_laser_pin_device.jpg</image:loc>
   <image:title>2 6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device</image:title>
  </image:image>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl169417969-2_6_inch_n_type_gan_on_sapphire_epitaxial_wafer_for_led_laser_pin_device.jpg</image:loc>
   <image:title>2 6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device</image:title>
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  <video:video>
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   <video:title>Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System</video:title>
   <video:description>1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell of the cavity is made of water-cooled aluminum alloy, ensuring uniform heating of the product and low surface temperature. Rapid Thermal Processing adopts PID control, and the</video:description>
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   <video:duration>7</video:duration>
   <video:publication_date>2024-09-26T15:52:20+08:00</video:publication_date>
   <video:view_count>10</video:view_count>
   <video:rating>4.2</video:rating>
   <video:tag>Boost Production Rapid Thermal Processing</video:tag>
   <video:tag>Rapid Thermal Processing Annealing System</video:tag>
  </video:video>
 </url>
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  <loc>https://greek.epi-wafers.com/sale-45275426-boost-production-rapid-thermal-processing-rtp-sa-8-annealing-system.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-12-06</lastmod>
  <image:image>
   <image:loc>https://greek.epi-wafers.com/photo/pl173407349-boost_production_rapid_thermal_processing_rtp_sa_8_annealing_system.jpg</image:loc>
   <image:title>Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System</image:title>
  </image:image>
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 <url>
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  <changefreq>monthly</changefreq>
  <lastmod>2024-12-06</lastmod>
  <video:video>
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   <video:title>GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production</video:title>
   <video:description>Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. Epitaxial wafers are then</video:description>
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   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
   <video:view_count>6</video:view_count>
   <video:rating>4.1</video:rating>
   <video:tag>Chip Production gan epi wafer</video:tag>
   <video:tag>Chip Production GaN Epitaxial Wafers</video:tag>
   <video:tag>Chip Production GaN epi-wafers</video:tag>
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   <image:title>GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production</image:title>
  </image:image>
  <image:image>
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   <image:title>GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production</image:title>
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   <video:title>625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire</video:title>
   <video:description>Substrate Thickness 650   25  m 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and</video:description>
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   <video:duration>34</video:duration>
   <video:publication_date>2024-10-29T11:46:37+08:00</video:publication_date>
   <video:view_count>15</video:view_count>
   <video:rating>4.9</video:rating>
   <video:tag>625um gan epi wafer</video:tag>
   <video:tag>675um gan epi wafer</video:tag>
   <video:tag>4 inch gan epitaxial wafer</video:tag>
  </video:video>
 </url>
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   <image:title>625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire</image:title>
  </image:image>
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   <video:description>Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium nitride (GaN)crystals have a wide range of application scenarios, including LEDs, high-speed electronic devices, and power electronic devices.</video:description>
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   <video:view_count>5</video:view_count>
   <video:rating>4.3</video:rating>
   <video:tag>GaN Gallium Nitride Single Crystal Substrate</video:tag>
   <video:tag>2inch Gallium Nitride Single Crystal Substrate</video:tag>
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 </url>
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 </url>
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  <video:video>
   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200</video:thumbnail_loc>
   <video:title>4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride</video:title>
   <video:description>Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) is a wide bandgap semiconductor material with a direct bandgap of 3.4 eV, which makes it widely used in optoelectronic and power electronic devices. Preparation process The</video:description>
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   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
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   <video:rating>4.7</video:rating>
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   <video:tag>Fe Doped gan substrate</video:tag>
   <video:tag>Freestanding gan substrate</video:tag>
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  <lastmod>2024-12-06</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl169417969-4_inch_fe_doped_freestanding_gan_substrate_gallium_nitride.jpg</image:loc>
   <image:title>4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride</image:title>
  </image:image>
 </url>
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  <priority>1.0</priority>
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  <video:video>
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   <video:title>2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer</video:title>
   <video:description>Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
   <video:view_count>6</video:view_count>
   <video:rating>4.2</video:rating>
   <video:tag>sic epitaxial wafer 2 Inch</video:tag>
   <video:tag>Power Device sic epitaxial wafer</video:tag>
   <video:tag>High Electron Mobility Transistor Epitaxial Wafer</video:tag>
  </video:video>
 </url>
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  <loc>https://greek.epi-wafers.com/sale-50552331-2-inch-power-device-high-electron-mobility-transistor-epitaxial-wafer.html</loc>
  <priority>1.0</priority>
  <changefreq>monthly</changefreq>
  <lastmod>2024-12-06</lastmod>
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   <image:loc>https://greek.epi-wafers.com/photo/pl118148167-2_inch_power_device_high_electron_mobility_transistor_epitaxial_wafer.jpg</image:loc>
   <image:title>2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer</image:title>
  </image:image>
 </url>
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   <video:thumbnail_loc>https://greek.epi-wafers.com/photo/epi-wafers/video/20240719_669a312024a83.mp4.jpg?1721633200</video:thumbnail_loc>
   <video:title>2 Inch GaN On Silicon HEMT Epi Wafer For Power Device</video:title>
   <video:description>Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202407/6bec0d57fe3dd100979d43599fdb2da5/playlist.m3u8</video:content_loc>
   <video:duration>19</video:duration>
   <video:publication_date>2024-07-19T17:25:51+08:00</video:publication_date>
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   <video:rating>4.9</video:rating>
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   <video:tag>Power Device Epi Wafer</video:tag>
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   <image:title>2 Inch GaN On Silicon HEMT Epi Wafer For Power Device</image:title>
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  <image:image>
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   <image:title>AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer  gallium nitride GaN-on-Si</image:title>
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 </url>
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  <image:image>
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   <video:description>Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202412/440bc44685fd6d3af5945db22c65b9c7/playlist.m3u8</video:content_loc>
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   <video:tag>2 inch sic epitaxial wafer</video:tag>
   <video:tag>2 inch sic epi wafer</video:tag>
   <video:tag>2 inch sic epi wafers</video:tag>
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   <image:title>GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer  UV LD Epi wafer</image:title>
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  <image:image>
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   <image:title>GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer  UV LD Epi wafer</image:title>
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   <image:title>2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon</image:title>
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  <image:image>
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   <image:title>2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon</image:title>
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   <video:title>Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer</video:title>
   <video:description>Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon substrate. This structure enables gallium nitride HEMTs to have high electron mobility and saturation electron velocity, making them suitable for high-power and high-frequency</video:description>
   <video:content_loc>https://vodcdn.ecerimg.com/videos/encoder/1202412/440bc44685fd6d3af5945db22c65b9c7/playlist.m3u8</video:content_loc>
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   <video:view_count>55</video:view_count>
   <video:rating>4.7</video:rating>
   <video:tag>Silicon Based Gallium Nitride Epitaxial Wafer</video:tag>
   <video:tag>HEMT epitaxial wafer</video:tag>
   <video:tag>4 inch sic epitaxial wafer</video:tag>
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  <lastmod>2024-12-06</lastmod>
  <image:image>
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   <image:title>Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer</image:title>
  </image:image>
  <image:image>
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   <image:title>Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer</image:title>
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   <image:title>2inch GaN on Silicon Green LED Epi wafer Gallium Nitride on Silicon</image:title>
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   <image:title>4inch GaN on Silicon Green LED Epi wafer  SiC epitaxial wafers</image:title>
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   <image:title>4inch GaN on Silicon Green LED Epi wafer  SiC epitaxial wafers</image:title>
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  <image:image>
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   <image:title>4inch GaN on Silicon Green LED Epi wafer  SiC epitaxial wafers</image:title>
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   <image:title>4inch uGaN on silicon undoped  gallium nitride on Silicon Epitaxial Wafer</image:title>
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  <image:image>
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   <image:title>4inch uGaN on silicon undoped  gallium nitride on Silicon Epitaxial Wafer</image:title>
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   <image:title>SiC N Type Substrate</image:title>
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